EEE109 Assignment 1 Chapter 1, 2, 3 and 5
Hello, dear friend, you can consult us at any time if you have any questions, add WeChat: daixieit
EEE109 Assignment 1 Chapter 1, 2, 3 and 5
1. A silicon semiconductor material is to be designed such that the majority carrier electron concentration is no = 7 × 1015 cm −3 .
(a) Should donor or acceptor impurity atoms be added to intrinsic silicon to achieve this electron concentration?
(b) What concentration of dopant impurity atoms is required?
In this silicon material, the minority carrier hole concentration is to be no larger than po = 106 cm −3 .
(c) Determine the maximum allowable temperature.
Hints: Try to use MATLAB to solve the equation, here are two useful
functions in MATLAB:
https://ww2.mathworks.cn/help/symbolic/solve.html
https://ww2.mathworks.cn/help/symbolic/vpa.html
2. Consider the Zener diode circuit shown in Figure 1. Let is VI = 20V VZ = 10V , Ri = 222 Ω ,and Pz (max) = 400mW.
Figure 1
(a)Determine IL , IZ and II if RL = 380 Ω
(b)Determine the value of RL that will establish PZ(max) in the diode;
(c) Repeat part (b) if Ri = 175Q
3. For the input shown in Figure 2.1. Assume Vy = 0.6 V.
Figure 2.1
(a)Plot vO for Figure 2.2
(b)Plot vO for Figure 2.3
Figure 2.2
Figure 2.3
4. In the circuit in Figure 3 the diodes have the piecewise linear parameters of Vy = 0.6 V and Tf = 0 .
Figure 3
Calculate the output VO and the diode currents ID1 and ID2 for the following input conditions:
(a)V1 = V2 = 10 V;
(b)V1 = 10 V, V2 = 0;
(c) V1 = 10 V, V2 = 5;
(d)V1 = 0, V2 = 0;
5. The threshold voltage of each transistor in Figure 4.1-4.3 is VTP = −0.4 V. Determine the region of operation of the transistor in
(a) Figure 4. 1;
(b) Figure 4.2
(c) Figure 4.3
Figure 4.1
Figure 4.2
Figure 4.3
6. Calculate the drain current in a PMOS transistor with parameters VTP = −0.5 V, kp(′) = 50 uA/V2, w = 12 um, L = 0.8 um, (Kp = ∙ , this equation can be found from the textbook page 136, Equation (3.5(b))) and with applied voltages VSG = 2 V and
(a)VSD = 0.2 V;
(b)VSD = 0.8 V;
(c) VSD = 2.2 V;
(d)VSD = 3.2 V;
7. An npn transistor with F = 80 is connected in a common-base configuration as shown in Figure 5.
Figure 5
(a)The emitter is driven by a constant-current source withIE = 1.2 mA .
Determine IB , IC , α , and VC .
(b)Repeat part (a) for IE = 0.80 mA .
(c) Repeat parts (a) and for F = 120.
8. Consider the circuit shown in Figure 6. VEB (on) = 0.7 V.
Figure 6
(a)Determine RTH , VTH , IBQ , ICQ , and VECQ for F = 90.
(b)Determine the percent change in ICQ and VECQ if F is changed to F =
150.
2022-11-11